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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small Package Low Forward Voltage Small Total Capacitance : USM. : VF=0.92V (Typ.).
2 M
KDS120
SILICON EPITAXIAL TYPE DIODE
E B M D 3
DIM A
B C D E G H J K
A
Fast Reverse Recovery Time : trr=1.6ns(Typ.). : CT=2.2pF (Typ.).
1
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10
0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN
J G
C
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55150 E UNIT V V mA mA A mW E
H N K N
L M N
3
1. CATHODE 1 2. CATHODE 2 3. ANODE
2 1
USM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
Lot No.
Type Name
A3
ELECTRICAL CHARACTERISTICS (Ta=25E
CHARACTERISTIC
)
TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 0.92 2.2 1.6 MAX. 1.20 0.5 4.0 4.0 i A pF nS V UNIT
SYMBOL VF(1)
Forward Voltage
VF(2) VF(3)
Reverse Current Total Capacitance Reverse Recovery Time
IR CT trr
2008.9. 8
Revision No : 4
1/2
KDS120
I F - VF
10 FORWARD CURRENT I F (mA) 10 10
C 10 0 Ta =
3
IR - VR
10 REVERSE CURRENT I R (A)
Ta=100 C
2
1
Ta=75 C Ta=50 C
Ta
1 10 10
-1
Ta =-2 5
=2 5
10
C
C
-1
10
-2
Ta=25 C
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-3
0
20
40
60
80
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
C T - VR
REVERSE RECOVERY TIME t rr (ns) 2.5 TOTAL CAPACITANCE C T (pF) 2.0 1.5 1.0 0.5 0
f=1MHz Ta=25 C
t rr - I F
100 50 30
Ta=25 C Fig. 1
10 5 3 1 0.5 0.1 0.3 1 3 10 30 100
0.2
1
3
10
30
100
200
REVERSE VOLTAGE VR (V)
FORWARD CURRENT I F (mA)
Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0
INPUT
0.01F
DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50) I F =10mA 0 IR
WAVEFORM
0.1 I R
50
2k
-6V 50ns
E t rr PULSE GENERATOR (R OUT =50)
2008. 9. 8
Revision No : 4
50
2/2

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